metal-insulator-semiconductor structure
- metal-insulator-semiconductor structure
- metalo-dielektriko-puslaidininkio darinys
statusas T sritis radioelektronika
atitikmenys: angl. metal-insulator-semiconductor structure
vok. Metall-Isolator-Halbleiter-Struktur, f
rus. структура металл-диэлектрик-полупроводник, f
pranc. structure métal-isolant-semi-conducteur, f
ryšiai: palygink – MDP darinys
Radioelektronikos terminų žodynas. – Vilnius : BĮ UAB „Litimo“.
Kazimieras Gaivenis, Gytis Juška, Vidas Kalesinskas.
2000.
Look at other dictionaries:
bulk metal-insulator-semiconductor structure — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
thermal nitridation metal-insulator-semiconductor — termiškai nitridintas MDP darinys statusas T sritis radioelektronika atitikmenys: angl. thermal nitridation metal insulator semiconductor; thermal nitridation MIS structure vok. MOS Struktur mit thermischer Nitrierung, f rus. МДП структура с… … Radioelektronikos terminų žodynas
complementary metal-insulator-semiconductor — jungtinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal insulator semiconductor; complementary MIS; complementary MIS structure vok. komplementäre MIS Struktur, f rus. комплементарная МДП структура, f pranc … Radioelektronikos terminų žodynas
Metal–insulator transition — Metal insulator transitions are transitions from a metal (material with good electrical conductivity of electric charges) to an insulator (material where conductivity of charges is quickly suppressed). These transitions can be achieved by tuning… … Wikipedia
structure métal-isolant-semi-conducteur — metalo dielektriko puslaidininkio darinys statusas T sritis radioelektronika atitikmenys: angl. metal insulator semiconductor structure vok. Metall Isolator Halbleiter Struktur, f rus. структура металл диэлектрик полупроводник, f pranc. structure … Radioelektronikos terminų žodynas
structure MIS de volume — tūrinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. bulk metal insulator semiconductor structure; bulk MIS structure vok. Volumen Metall Isolator Halbleiter Struktur, f; Volumen MIS Struktur, f rus. объёмная МДП структура, f … Radioelektronikos terminų žodynas
semiconductor device — ▪ electronics Introduction electronic circuit component made from a material that is neither a good conductor nor a good insulator (hence semiconductor). Such devices have found wide applications because of their compactness, reliability,… … Universalium
structure métal-isolant-semi-conducteur à nitruration thermique — termiškai nitridintas MDP darinys statusas T sritis radioelektronika atitikmenys: angl. thermal nitridation metal insulator semiconductor; thermal nitridation MIS structure vok. MOS Struktur mit thermischer Nitrierung, f rus. МДП структура с… … Radioelektronikos terminų žodynas
structure métal-isolant-semi-conducteur complémentaire — jungtinis MDP darinys statusas T sritis radioelektronika atitikmenys: angl. complementary metal insulator semiconductor; complementary MIS; complementary MIS structure vok. komplementäre MIS Struktur, f rus. комплементарная МДП структура, f pranc … Radioelektronikos terminų žodynas
Semiconductor device — Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most … Wikipedia